| PART |
Description |
Maker |
| MGF0906 MGF0906B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| MGF0907B 0907B MGF0907 |
L,S BAND POWER GaAs FET
From old datasheet system
L, S BAND POWER GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
| FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管
0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC[NEC]
|
| MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HWL26NPA |
L-Band GaAs POWER FET
|
Hexawave, Inc
|
| HWL23NPB |
L-Band GaAS Power FET
|
Hexawave, Inc
|
| HWL27NPB |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| HWL34YRF |
L-Band GaAs Power FET
|
Hexawave, Inc
|
|
